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Revision: 03-Nov-10
VFT6045CBP
Vishay General Semiconductor
New Product
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ≤
40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
IF
= 10 A
= 15 A 0.47 -
TA
= 25 °C
VF
(1)
0.44 -
V
IF
IF
= 30 A 0.54 0.64
IF
= 10 A
= 15 A 0.37 -
TA
= 125 °C
0.33 -
IF
IF
= 30 A 0.47 0.56
Reverse current per diode VR
= 45 V
TA
= 25 °C
IR
(2)
= 125 °C 18 50 mA
- 3000 μA
TA
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VFT6045CBP UNIT
Typical thermal resistance
per diode
R
per device 3.5θJC
5.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
ITO-220AB VFT6045CBP-M3/4W 1.76 4W 50/tube Tube
Case Temperature (°C)
A
v
erage For
w
ard Rectified C
u
rrent (A)
70
60
50
40
10
0
0 25 50 75 125 150100
30
20
0
2
12
14
16
20
0 5 15 30 3510
20
25
Average Forward Current (A)
A
v
erage Po
w
er Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = tp/T tp
T
6
8
10
4
18
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